MoSys and TSMC Extend 1T-SRAM Embedded Memory Licensing Agreement

Licensing Agreement Covers TSMC's 90nm, 65nm, and Future Embedded DRAM Nodes

SUNNYVALE, Calif., Feb. 5 /PRNewswire-FirstCall/ -- MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, today announced a licensing agreement that allows Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) (NYSE: TSM), the world's largest dedicated semiconductor foundry, to develop and market memory macro products using MoSys' patented 1T-SRAM(R) high-density embedded memory intellectual property (IP).

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The agreement covers current and advanced manufacturing process generations and further reinforces the companies' commitment to a long-term technical and commercial relationship. In addition, MoSys will become one of TSMC's embedded DRAM platform providers. At the same time, MoSys will continue to offer memory macros to its own customers for presently available and future nanometer geometries.

"The renewal of MoSys' high-density embedded memory intellectual property license by TSMC marks an important milestone for MoSys," commented Chet Silvestri, chief executive officer of MoSys. "Now SoC designers will continue to have access to advanced eDRAM technology and design expertise from the world's largest semiconductor foundry."

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY) develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed, and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in system-on-chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com .

Web site: http://www.mosys.com//




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