Toshiba Introduces 650V System Super Junction MOSFET "DTMOS IV" Series

Realizes Top Class1 Low On Resistance Performance

TOKYO — (BUSINESS WIRE) — July 17, 2013Toshiba Corporation (TOKYO:6502) today announced that it has launched the 4th generation of its super junction MOSFETs, the "DTMOS IV" series of 650V devices. The "TK14A65W" has been launched as the initial product in the series and full-scale mass production is scheduled to start in August, 2013.
Using the latest single epitaxial process, the series reduces the Ron·A (on resistance per area) by approximately 50%2 compared to existing 650V "DTMOS II" series. This allows a line-up of small packages, contributing improved power efficiency and downsizing of products into which they are integrated.

Toshiba 650V system DTMOS IV series, "TK14A65W" (Photo: Business Wire)

Toshiba 650V system DTMOS IV series, "TK14A65W" (Photo: Business Wire)

 

Main Specifications

Part
Number

  Package  

Absolute Maximum
Ratings

  RDS(ON) Max
(Ω)
  Qg
Typ.
(nC)
  Ciss
Typ.
(pF)
VDSS (V)   ID (A) VGS=10V
TK14A65W   TO-220SIS   650   13.7   0.25   35   1300

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