Mitsubishi Electric Develops World’s First GaN HEMT Amplifier Exclusive to Satellite Applications

Use of Gallium Nitride Achieves High Output of up to 100 W

TOKYO — (BUSINESS WIRE) — February 24, 2010Mitsubishi Electric Corporation (TOKYO:6503) announced today it has developed four models of gallium nitride high-electron mobility transistor (GaN HEMT) for 4.0 GHz band satellite applications, with output ranging from 2W to 100W. With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.

Summary of Sale

Product   Model   Description

Internally impedance matched
high output power GaN HEMT


f=3.7 - 4.2 GHz (one of the three separated bands)

Output Power: 50 dBm (100 W), Efficiency: 60%


f=3.7 - 4.2 GHz (one of the three separated bands)

Output Power: 46 dBm (40 W), Efficiency: 60%

  MGFC43G3742S   f=3.7 - 4.2 GHz

Output Power: 43 dBm (20 W), Efficiency: 60%

Non internally impedance matched
high output power GaN HEMT

  MGF2633GS   f=4.0 GHz

Output Power:33 dBm (2 W), Efficiency: 50%

Aim of Sale

As more and more satellites are meeting the end of their operational lifespan, demand for new microwave communication satellites has recently been growing. While transmitter devices in these communication satellites have traditionally utilized gallium arsenide (GaAs) amplifiers, gallium nitride (GaN) HEMT amplifiers offer higher efficiency, as well as high-filed electron velocity and high breakdown fields. These characteristics help make transmitter devices smaller, lighter and more durable.

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