MoSys (R) 1T-SRAM(R) Embedded Memory Technology Meets TSMC 90 Nanometer eDRAM Process Standards

SUNNYVALE, Calif., Oct. 28 /PRNewswire-FirstCall/ -- MoSys, Inc. (NASDAQ: MOSY), a leading provider of high-density system-on-chip (SoC) memory and analog/mixed-signal intellectual property (IP), today announced it has achieved Level III and IV verification of its 1T-SRAM embedded memory technology on TSMC's 90 nanometer (nm) General Purpose eDRAM process by the foundry's IP Alliance program.

(Logo: http://www.newscom.com/cgi-bin/prnh/20070705/MOSYSLOGO)

TSMC's IP Alliance includes a quality management program that requires IP cores to demonstrate manufacturability and functionality. MoSys' 1T-SRAM memory macros have been tested and verified to Levels III and IV, including full characterization of seven-corner split wafer lots and full high temperature operating life (HTOL) testing on three distinct wafer lots.

"We are pleased to reach this important milestone in which MoSys' patented technologies were successfully incorporated into SoC designs fabricated using TSMC's 90 nm advanced processes," said Len Perham, President and Chief Executive Officer of MoSys. "By leveraging the extensive testing and stressing performed to reach TSMC Level III and IV compliance, MoSys can now more clearly demonstrate the reliability of MoSys' 1T-SRAM memories."

About MoSys, Inc.

Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses innovative embedded memory and analog/mixed-signal intellectual property (IP) technologies for advanced SoCs used in a variety of home entertainment, mobile consumer, networking and storage applications. MoSys' patented 1T-SRAM and 1T-FLASH technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. MoSys' advanced analog/mixed-signal technologies include a highly integrated Blu-ray DVD front-end and Gigabit Ethernet. MoSys' embedded memory IP has been included in more than 160 million devices demonstrating silicon-proven manufacturability in a wide range of processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-FLASH(TM) is a trademark of MoSys, Inc

     Walter Croce                                 Beverly Twing
     MoSys, Inc.                                  Shelton Group
     Director of Marketing, Memory Products       Sr. Acct. Manager
     Sunnyvale, CA                                972-239-5119 ext. 126
     +1 (408) 731-1820                            btwing@sheltongroup.com
     wcroce@mosys.com

Web site: http://www.mosys.com/




Review Article Be the first to review this article
Rand3D

Featured Video
Jobs
Mechanical Design Engineer 3 for KLA-Tencor at Milpitas, CA
Sr Mechanical Design Engineer for Medtronic at mounds view, MN
Geospatial Systems Administrator for BAE Systems Intelligence & Security at arnold, MO
Urban Designer - Urban Design/Planning for SERA Architects, Inc at Portland, OR
Avionics System Engineer for BAE Systems Intelligence & Security at Arlington, VA
Geospatial Analyst - Senior for BAE Systems Intelligence & Security at Springfield, VA
Upcoming Events
ESPRIT World 2018 at Indianapolis Marriott Downtown 350 West Maryland Street Indianapolis IN - Jun 11 - 15, 2018
HxGN LIVE 2018 at The Venetian Las Vegas NV - Jun 12 - 15, 2018
IMTS2018 International Manufacturing Tech Show at McCormick Place Chicago IL - Sep 10 - 15, 2018
Kenesto: 30 day trial



Internet Business Systems © 2017 Internet Business Systems, Inc.
25 North 14th Steet, Suite 710, San Jose, CA 95112
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering EDACafe - Electronic Design Automation GISCafe - Geographical Information Services TechJobsCafe - Technical Jobs and Resumes ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise