Toshiba Adds Five DC-DC Converter MOSFETs for High Power Efficiency Computing, Communications and Consumer Electronics Applications

Five Single N-Channel MOSFETs Optimized for Low On-Resistance and Fast Switching

IRVINE, Calif., Aug. 26 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has expanded its synchronous DC-DC converter lineup with five new power MOSFETs targeted for use in mobile and desktop computers, servers, game consoles and other electronic devices to convert input voltage to the level required for various subsystems, such as the processor, memory and input-output devices. Developed by Toshiba Corp., the five MOSFETs take advantage of improvements for N-channel devices in the company's fifth-generation UMOS V-H process to achieve low on-state resistance (RDS(ON)) as well as fast switching for high-side MOSFET applications, enabled through lower gate charge (QSW) and lower gate resistance (Rg).

The first new device is the TPCM8004, which features drain-source voltage (VDSS) of 30V (max.), drain current (ID) of 24A (max.), RDS(ON) of 11.0milliohm(1) (max.), low gate resistance of 1ohm (typ.) and a compact, low profile TSSOP Advance package from Toshiba measuring 3.5mm x 4.65mm x 0.75mm.

The Toshiba TPCA8030-H and TPCA8031-H MOSFETs are targeted for use as high-side DC-DC converter MOSFETs with VDSS of 30V (max.), ID of 24A (max.), and RDS(ON) of only 11.0milliohm(1) (max.). The TPCA8030-H has typical gate resistance of 1ohm, while the TPCA8031-H has typical gate resistance rated at 3.4ohm. Both devices are available in low profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm.

The Toshiba TPC8037-H and TPC8038-H MOSFETs are high-side MOSFETs with VDSS of 30V (max.), ID of 12A (max.), and RDS(ON) of only 11.4milliohm(1) (max.). The TPC8037-H has typical gate resistance of 1ohm, while the TPC8038-H has typical gate resistance rated at 3.4ohm. Both devices are available in SOP 8 packaging, which measures 5mm x 6mm x 1.6mm.

"These MOSFETs offer high efficiency solutions for synchronous DC-DC conversion with a choice of parameters and packages to meet a diverse range of requirements," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC.

    Specifications for Toshiba UMOS V-H Single N-Ch MOSFETs for DC-DC

                                                           Crss  Ciss
    Product     Maximum    Gate         RDS(ON) (mo)        (pF) (pF)
    Number      Ratings Resistance                         Typ.   Typ.
                                      Typ.        Max.      VDS=10V,   Package
               VDSS  ID     Rg     @VGS= @VGS= @VGS= @VGS=   VGS=0V,
               (V)   (A)  (ohm)    4.5V 10.0V  4.5V  10.0V   f=1MHz

    TPCM8004-H  30   24    1.0     9.6   7.3   13.4  11.0   83  1433   3.5mm x
                                                                      4.65mm x

    TPCA8030-H  30   24    1.0     9.6   7.3   13.4  11.0   83   1433    SOP
                                                                        5mm x
                                                                        6mm x
    TPCA8031-H  30   24    3.4     9.6   7.3   13.4  11.0   83   1433   0.95mm

    TPC8037-H   30   12    1.0     9.9   7.6   13.9  11.4   83   1433   SOP-8
                                                                        5mm x
                                                                        6mm x
    TPC8038-H   30   12    3.4     9.9   7.6   13.9  11.4   83   1433   1.6mm

Pricing and Availability

Samples of the five new Toshiba UMOS V-H DC-DC converter MOSFETs are available now, with prices in sample quantities starting at $0.52.

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