Toshiba Launches Low-height Package, Rail-to-Rail Output Gate-drive Photocouplers

TOKYO — (BUSINESS WIRE) — September 5, 2014Toshiba Corporation (TOKYO:6502) today announced the launch of rail-to-rail output gate-drive photocouplers in low-height SO6L packages, for use in directly driving low- to medium-power IGBTs and power MOSFETs. Mass production shipment will start from today.

Toshiba: Low-height SO6L Package, Rail-to-Rail Output Gate-drive Photocoupler (Photo: Business Wire)

Toshiba: Low-height SO6L Package, Rail-to-Rail Output Gate-drive Photocoupler (Photo: Business Wire)

The new photocouplers, “TLP5751” for driving small-power IGBTs and “TLP5752” and “TLP5754” for driving middle-power IGBTs, utilize the low-height SO6L package. At only 54% the height and 43% the mounting area of Toshiba products that use the DIP8 package, the new products can contribute to the development of thinner and smaller sets. In spite of their low height, the products guarantee a creepage distance of 8mm and isolation voltage of 5kV, making them suitable for applications requiring higher isolation specs.

As for electrical characteristics, the new photocouplers have rail-to-rail output which enables higher efficiency by making operation voltage wider in full-swing. They are available in three output currents, 1A, 2.5A and 4A, to meet a wide range of user requirements. They are also embedded with Toshiba’s original high-power infrared LED, allowing it to be used in a wide range of applications, including those that require high thermo-stability, such as factory automation, home photovoltaic power systems, digital home appliances and UPS.


 Key Specifications of the New Products 

Part Number   TLP5751   TLP5752   TLP5754
Peak Output Current ±1.0A   ±2.5A   ±4.0A
Power Supply Voltage 15~30V
Supply Current 3mA (max.)
Threshold Input Current 4mA (max.)
Propagation Delay Time 150ns (max.)
Propagation Delay Skew 80ns (max.)
Rail-to-Rail Output Equipped
VUVLO Function Equipped
Creepage Distance 8mm (min.)
Isolation Voltage 5000Vrms (min.)
Common Mode Transient Immunity ±35 kV/µsec
Operation Temperature Range -40~110 ºC
Accommodated power devices  

IGBTs (up to
20A class) and
power MOSFETs


IGBTs (up to
80A class) and
power MOSFETs


IGBTs (up to
100A class) and
power MOSFETs


1 | 2  Next Page »

Review Article Be the first to review this article

Featured Video
Mechanical Engineer for Allen & Shariff Corporation at Pittsburgh, Pennsylvania
Mid-Level Mechanical Engineer for Kiewit at lenexa, Kansas
System Designer/Engineer for Bluewater at Southfield, Michigan
Director of Process Engineering. for Tekni-Plex at Toledo, Ohio
SENIOR GIS GAS SPECIALIST for James W. Sewall Company at , Any State in the USA
Geospatial Analyst/Programmer for LANDIQ at Sacramento, California
Upcoming Events
ESPRIT World 2018 at Indianapolis Marriott Downtown 350 West Maryland Street Indianapolis IN - Jun 11 - 15, 2018
HxGN LIVE 2018 at The Venetian Las Vegas NV - Jun 12 - 15, 2018
IMTS2018 International Manufacturing Tech Show at McCormick Place Chicago IL - Sep 10 - 15, 2018
4th International Conference on Sensors and Electronic Instrumentation Advances (SEIA' 2018) at Movenpick Hotel Amsterdam City Centre Amsterdam Netherlands - Sep 19 - 21, 2018
Kenesto: 30 day trial

Internet Business Systems © 2018 Internet Business Systems, Inc.
25 North 14th Steet, Suite 710, San Jose, CA 95112
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering EDACafe - Electronic Design Automation GISCafe - Geographical Information Services TechJobsCafe - Technical Jobs and Resumes ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise