February 2014, San Jose, Ca …. Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has recently launched new cost-effective N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance.
The AP99T03GS-HF-3 MOSFET comes in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. Devices are well-suited for low voltage applications such as DC/DC converters, and are also available as the AP99T03GP-HF-3 in a TO-220 through-hole package which is ideal for applications where a small PCB footprint or an attached heatsink is required.
Both new MOSFETs benefit from simple drive requirements and offer a fast switching performance, very low on-resistance of only 2.5mΩ, a drain-source breakdown voltage of 30V, and a continuous drain current of 120A. The components are halogen-free and fully RoHS-compliant.
For more information, a datasheet can be downloaded at
About Advanced Power Electronics Corp.
Established in Taiwan in 1998, Advanced Power Electronics Corporation (APEC) has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company’s wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments. ISO-approved, Advanced Power Electronics Corp. (USA)’s commitment to consistent quality assurance and the increased economies of scale has seen the company increase in revenue - and trade profitably each year since its foundation - and it has been ranked as one of the world's top fifteen power transistor suppliers by iSuppli.
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