Samsung to Unveil First V-NAND Product during Keynote
SANTA CLARA, Calif. — (BUSINESS WIRE) — August 8, 2013 — Samsung Electronics:
WHO: Keynote presentation by E.S. Jung, Executive Vice President and General Manager, Semiconductor R&D Center, Samsung Electronics; and Jim Elliott, Vice President, Memory Marketing, Samsung Semiconductor, Inc.
Samsung will provide an overview of its success in overcoming the NAND flash scaling challenge. Samsung will also explain how it has achieved this breakthrough as well as examine why such a major shift in flash manufacturing is critical to the marketplace, and announce its first Vertical NAND (V-NAND) based product – an advanced enterprise SSD.
The world’s first 3D Vertical NAND memory represents a cost-effective way to provide over twice the scaling of 20nm-class* planar NAND flash with 2X-10X the reliability. The 3D V-NAND will allow for new levels of innovation in circuits, structure, material and the manufacturing process with the ability to scale to 1Tb and beyond per individual NAND chip.
Note: 20nm-class means a process technology node somewhere between 20 and 30 nanometers.
Samsung’s new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives.
WHEN: Tuesday, August 13, 2:30 - 3:00 pm, plus extended Q&A session afterward
WHERE: Mission City Ballroom at the Santa Clara Convention Center, Santa Clara, Calif.
FOR MORE INFORMATION: Contact John Lucas at Email Contact
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