Toshiba Launches High Voltage MOSFETs "πMOS VIII" Series

Reduces On-Resistance by approximately 24%

TOKYO — (BUSINESS WIRE) — July 21, 2013Toshiba Corporation (TOKYO:6502) today announced that it has launched a new series of high voltage MOSFETs, "πMOS VIII" series, and introduced "TK9J90E" as the initial product of the series. Mass production is scheduled to start in August, 2013.

Toshiba's high voltage MOSFET, "TK9J90E". (Photo: Business Wire)

Toshiba's high voltage MOSFET, "TK9J90E". (Photo: Business Wire)

Optimization of chip design reduces Ron·A (on resistance per area) by approximately 24% compared to a product1 with an equivalent voltage. Reduction of Qg (gate charge) performance by approximately 24% improves turn off time (toff) by approximately 28%.


Main Specifications

Part Number   Package   Absolute Maximum Ratings   RDS(ON) Max (Ω)   Qg Typ.
  Ciss Typ.
VDSS (V)   ID (A) VGS=10V
TK9J90E   TO-3P(N)   900   9   1.3   46   2000

1 | 2  Next Page »

Review Article Be the first to review this article
Autodesk - DelCAM

Featured Video
GIS Analyst for City of Elk Grove at Elk Grove, CA
Upcoming Events
Electric&Hybrid Aerospace Technology Symposium 2016 at Conference Centre East. Koelnmesse (East Entrance) Messeplatz 1 Cologne Germany - Nov 9 - 10, 2016
Autodesk University Las Vegas at Las Vegas NV - Nov 15 - 17, 2016
TurboCAD pro : Start at $299

Internet Business Systems © 2016 Internet Business Systems, Inc.
595 Millich Dr., Suite 216, Campbell, CA 95008
+1 (408)-337-6870 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering EDACafe - Electronic Design Automation GISCafe - Geographical Information Services TechJobsCafe - Technical Jobs and Resumes ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy Policy Advertise