Toshiba to Launch High-Speed Dual N-ch MOSFET for DC-DC Converters of Mobile Devices

Low capacitance product supporting high-currents improves efficiency of high-speed switching

TOKYO — (BUSINESS WIRE) — March 1, 2013Toshiba Corporation (TOKYO:6502) today announced that it has launched a low capacitance dual N-ch MOSFET for high-speed switches in the high-current charging circuits of mobile devices, such as smartphones and tablets.

Toshiba High-speed Dual N-ch MOSFET for DC-DC Converters of Mobile Devices (Photo: Business Wire)

Toshiba High-speed Dual N-ch MOSFET for DC-DC Converters of Mobile Devices (Photo: Business Wire)

As additional functions are added to mobile devices, including smartphones, cellular phones, tablets and notebook PCs, and as increasing demands are made on the batteries of those devices, efforts continue to improve the user experience and cut charge times by boosting charge density and significantly increasing the charging current and frequency. Toshiba's new low capacitance product "SSM6N58NU" is the company's latest addition to its dual N-ch MOSFET line-up, suitable as high-speed switches for high-current charging circuits.

Applications

High-current (up to 4A) charging switches for mobile devices including smartphones, celluar phones, tablets and notebook PCs.

Key Features

1. High-current

2. Low ON-resistance

3. Low capacitance

4. Small package

 

Main Specifications

Package

 

Part number

 

VDSS
(V)

 

VGSS
(V)

 

ID(DC)
(A)

 

RDS(ON) typ. (mΩ)

 

Ciss
(pF)

 

Qg
@4A
(nC)

VGS=
1.8 V

 

VGS=
2.5 V

 

V GS =
4.5 V

SOT-1118

 

 

 

 

 

 

 

 

 

(UDFN6)

SSM6N58NU

30

±12

4

112

84

67

129

1.8

2.0×2.0mm                                    
 

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