EL SEGUNDO, Calif. – March 19, 2013

What: AWR Corporation and Cree Inc. invite power amplifier (PA) designers to learn more about the design of Class F, inverse Class F, and continuous Class F power amplifiers using Cree GaN HEMTs and AWR’s Microwave Office® circuit design software. Hosted by Microwave Journal, this hour-long webinar takes place on Tuesday, March 26 at 11:00 a.m. EDT. It focuses on the design of power amplifiers employing gallium nitride (GaN) high electron mobility transistors (HEMTs) to maximize power added efficiencies (PAEs) and how Microwave Office software can be used to optimize source and load-pull at both fundamental and harmonic frequencies.

Where:  For details and to register, visit http://www.microwavejournal.com/events/1021

When: 
Tuesday, March 26, 11:00 a.m. EDT

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Contact:
Sherry Hess
AWR Corporation
Vice President of Marketing
(310) 726-3000
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